Abstract
We report on recent developments of an “at-wavelength” full-field imaging technique for inspection of multilayer mask blank defects and patterned mask samples for extreme ultraviolet lithography (EUVL) by EUV photoemission electron microscopy (EUV-PEEM). A bump-type line defect with a width of approximately 35nm that is buried beneath Mo/Si multilayer has been detected clearly, and first inspection results obtained from a patterned TaN absorber EUVL mask sample is reported. Different image contrast of a similar width of multilayer-covered substrate line defect and on top TaN absorber square has been observed in the EUV-PEEM images, and origin of the difference in their EUV-PEEM image contrast is discussed.
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