Abstract
We have improved DUV laser reticle inspection system LM7000 for 90 nm technology node devices. To increase inspection sensitivity, we developed a reflected light inspection as a supplementary method to transmittance light inspection. We have also strengthened inspection algorithm to distinguish between real defects and very small features from optical proximity effect correction (OPC). Finally, we have improved reference image for die to database inspection. With the merit of short wavelength of LM7000 (266 nm), the inspection sensitivity of the high-transmittance half-tone phase shift mask (HTPSM) does not deteriorated so severely compared to that of binary mask. With the help of these series of improvements, LM7000 could shows inspection capability for OPC masks and HTPSM for ArF lithography. The inspection capability of LM7000 was proved with the programmed defect masks and printability experiment using ArF scanner.
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