In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

Abstract

ABSTRACTUniform epitaxial CoSi2 layers have been grown in situ on a (100) Si substrate at temperatures near 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η5-C5H5)(CO)2. The growth kinetics of an epitaxial CoSi2 layer on a Si (100) substrate was investigated at temperatures ranging from 575 to 650 °C. In initial deposition stage, platelike discrete CoSi2 spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete CoSi2 plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial CoSi2 growth on (100) Si, the activation energy of the parabolic growth was found to be 2.80 eV. The growth rate seems to be controlled by the diffusion of Co through the CoSi2 layer.