Abstract
Observations of damage structure and analysis of compositional changes are important to elucidate the fundamental process of radiation damage in ion-irradiated ceramics. We have developed an in-situ observation system consisting of a 100 keV transmission electron microscope linked with both an ion accelerator and a parallel electron energy loss spectrometer (P-EELS), as shown in Fig.1[1,2]. Using this system, the plasmon loss peaks of SiC crystals were found to shift to the lower energy side during hydrogen ion irradiation at room temperature (RT)[3].The present paper reports the results of in-situ observation and analysis by P-EELS of SiC crystals during hydrogen ion irradiation and the effects of 100keV electron irradiation after hydrogen ion implantation.Specimens used in the present work were SiC sintered crystals supplied from Hitachi Research Lab., Hitachi LTD. Thin films suitable for electron microscopy were made by 2-4 keV Ar+ions etching after mechanical polishing and then irradiated with 10keV H2+ions by use of ion accelerator combined with EM at RT and 800 °C, respectively.
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