Abstract
This paper describes the elecrtical and optical characteristics of <TEX>$N_2$</TEX> doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by <TEX>$HF+C_2H_5OH$</TEX> solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: <TEX>$Si_2(CH_3)_6)$</TEX>. 0 ~ 40 sccm <TEX>$N_2$</TEX> was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with <TEX>$7.1\;mA/cm^2$</TEX> current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with <TEX>$N_2$</TEX> doping rate. These results are attributed to the decrease of crystallinity by <TEX>$N_2$</TEX> doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.
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