Abstract
Porous SnO2 photoanodes coated by alumina through atomic layer deposition technology are reported. It is found that when the dosing time of precursor is extended over 11 s, the 125% maximum increase of cell efficiency is achieved. It is believed that besides the interfacial charge recombination being efficiently suppressed by this ultra-thin coating, the increased absorption of dyes and elimination of the high density of monoenergetic surface states on SnO2 might play a positive role in improving the cell efficiency. The reason is that a long exposure time of precursor can guarantee the 100% coverage of alumina on porous SnO2, which is further explained by a built three-step model. Then we conclude that for a high cell efficiency in porous photoelectrode a long exposure time is indispensable.
Published Version
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