Insights into the DC, RF/Analog and linearity performance of vertical tunneling based TFET for low-power applications

Abstract

The concept of dual metal and double gate in Vertical TFET is presented to show the improvement of DC as well as analog/RF device performance standards due to enhanced gate modulation is presented in this work. This study includes the analysis of capacitances present in the device and various figures of merit (FOMs) such as transconductance (gm), cut-off frequency (fT), gain bandwidth product (GBP), transit time (τ) and transconductance frequency product (TFP) that is crucial in understanding the behavior of device for RF applications. Further from analog design point of view, it is intuitive that estimation of linearity is essential for accessing the scope of application of device. So, linearity and reliability is computed concerning higher order transconductance and VIP3, IIP3, IMD3 and 1-dB compression point of the device. The proposed TFET follows the ITRS roadmap for low standby power switch performance.