Abstract
High‐mobility, high‐stability InGaZnO (IGZO) thin‐film transistors (TFTs) were fabricated with the aid of phenyltriethoxysilane (PTES) self‐assembled monolayers (SAMs) instead of traditional passivation layer. The effect of PTES on the performance IGZO‐TFTs was investigated, systematically. Compared to the IGZO‐TFTs without PTES modification, PTES‐treated IGZO‐TFTs exhibited higher mobility and smaller hysteresis of transfer curves, owing to less adsorption/desorption effect on the IGZO surface and mild self‐assembly process. Meanwhile, IGZO‐TFTs modified with PTES SAMs exhibited a more excellent electrical stability with a threshold voltage shift (ΔVth) of only 0.17 V than the unmodified one with a ΔVth of 5.38 V, which was attributed to the formation of hydrophobic PTES SAMs on the IGZO surface and the well‐ordered interface between PTES and back channel surface. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.
Published Version
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