Insight into the enhancement of photovoltaic properties of Ti-doped Copper(I) oxide via: Modified spray pyrolysis technique

Abstract

For years, the human race has awaited a more convenient, greener, and largely efficient material for energy conversion and electronic applications. Cu2O thin films produced by spray pyrolysis meet the economic viability and cost requirements, and it is widely assumed that they will lead to the production of functionally viable technologies. The spray pyrolysis method was used to added titanium into copper (I) oxide thin films with a deposition temperature of 200 °C and annealing for 2 h at 200 °C in this study. The Ti-doped Cu2O's optical, surface morphology, and photovoltaic characteristics have all been thoroughly explored. The best characteristics were obtained at 3% Ti doped Cu2O. The near-band emission of Ti-doped Cu2O was moved from 385 nm to 400 nm. The bandgap was reduced from 2.35 to 1.98Ev at 3% Ti doped Cu2O. As a result, Cu2O (Ti)-based solar cells' short circuit current density and open circuit voltage were greatly improved. It has been demonstrated that adding Ti to p-CuO/n-Si solar cells enhances their photovoltaic performance.