Abstract
A simple and low-cost procedure (spray pyrolysis) was used to elaborate a copper oxide thin films on ordinary glass substrates. A copper nitrate was used and dissolved in two different solutions (Water, Methanol) S1 and S2 respectively in order to obtain an equal concentration; CS1,S2=0.5M. The spray pyrolysis deposition made at fixed temperature T=500°C and different volumes of S1 or S2 on the glass substrates. The X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectrophotometry were used to determinate the structural, morphological and optical properties of CuO thin films. The X-ray diffraction patterns confirm the presence of the polycrystalline phase of CuO as monoclinic crystal structure with preferential orientation along (110), (002), (111), (200) and (020). Their optical band gaps ranged from 3.95 to 4.02eV for thin films made with S1, and from 1.6 to 1.95eV for thin films made with S2 with a high absorbency in the visible region, which is in agreement with the values of the literature.
Highlights
IntroductionA simple and low-cost procedure (spray pyrolysis) was used to elaborate a copper oxide thin films on ordinary glass substrates
A simple and low-cost procedure was used to elaborate a copper oxide thin films on ordinary glass substrates
We used in our work a simple means of deposition, it is an empty perfume spray bottle of 15 ml volume filled with a desired precursor solution S1 or S2, a hot plate at high temperature (550°C), ultra sonic apparatus, ordinary glass substrates and solvents for cleaning and preparation of S1 and S2 solutions. the precursor and the solvents are Aldrich brand
Summary
A simple and low-cost procedure (spray pyrolysis) was used to elaborate a copper oxide thin films on ordinary glass substrates. The X-ray diffraction patterns confirm the presence of the polycrystalline phase of CuO as monoclinic crystal structure with preferential orientation along (110), (002), (111), (200) and (020) Their optical band gaps ranged from 3.95 to 4.02eV for thin films made with S1, and from 1.6 to 1.95eV for thin films made with S2 with a high absorbency in the visible region, which is in agreement with the values of the literature. This technique consists of spontaneous irradiation with daylight or an artificial lamp with a semiconductor [3]. It is considered a new active and cost-effective abatement technology for the treatment of residual organic substances and the modification of hazardous chemicals in different forms [4]. The temperature of the substrate that has an effect on the layer during growth
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