Abstract
Metal-enhanced oxidation (MEO) using ultrathin Ba layers on 4H-SiC surfaces was investigated by physical and electrical characterizations. We found that while comparable oxidation rates were enhanced for Si- and C-face surfaces even at a low temperature, significant surface and interface roughness were induced by initial MEO termed the incubation period. Depth profiling revealed that although most Ba atoms aggregated on the oxide surface, a tiny amount (∼1014 cm−2) remaining at the oxide interface was responsible for the following stable MEO reaction and the reduced interface state density with the drawbacks of degraded leakage current and breakdown characteristics of SiC-MOS devices.
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