Abstract
We employed a high temperature conductance method to investigate the interface state properties of the Al2O3/B-doped diamond MOS structure by considering the surface potential fluctuation. Based on Gaussian approximation of Nicollian's model and Brew's graphical approach, we analyzed the frequency dependent characteristics of parallel conductance (Gp/ω–f) at various gate voltages and extracted the energy distribution of interface state density (Dit), capture cross section (σp), time constant (τit), and the standard deviation of surface potential fluctuation (σs). The Dit extracted by the conductance method exhibited good agreement with that by the high-low method, whereas there exist large errors when surface potential fluctuation was not considered by using the conductance method. The capture cross section extracted by the conductance method was on the order of 10−17 cm2. From the energy dependence of the interface state time constant, the hole capture and emission follow the Shockley–Read–Hall statistics. σs decreases with the energy position away from the valence band edge (Ev) of diamond, indicating that donor-like traps are distributed in the Ev side of diamond.
Highlights
Scitation.org/journal/apl diamond is considered to be one main reason for the low channel mobility of the inversion type p-channel diamond metal–oxide–semiconductor field-effect transistor (MOSFET)
The Dit extracted by the conductance method exhibited good agreement with that by the high-low method, whereas there exist large errors when surface potential fluctuation was not considered by using the conductance method
The consideration of surface potential fluctuation generated by the interface charge inhomogeneity is very important to clarify the properties of interface states, including the trap type, trap density, capture cross section, and time constant
Summary
Scitation.org/journal/apl diamond is considered to be one main reason for the low channel mobility of the inversion type p-channel diamond MOSFET. We employed a high temperature conductance method to investigate the interface state properties of the Al2O3/B-doped diamond MOS structure by considering the surface potential fluctuation.
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