Abstract
Nanoscale memristors exhibiting voltage-induced resistivity switching are a crucial component in the neuromorphic computation architecture. The cover image of article number 2200067 by Wei-Cheng Lee and co-workers schematically demonstrates that the weakening of the Nb-Nb dimers dynamically driven by the Joule heating effect triggers local metal-to-insulator transitions responsible for the resistivity switching observed in NbO2.
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