Abstract
This cover shows the growth of a benchmark organic semiconductor, rubrene, on hexagonal boron nitride (h‐BN) substrate via physical vapor deposition from the initial amorphous phase to the final crystalline phase; the role of temperature in such transition and the epitaxy relationship between rubrene and h‐BN are revealed. With the increase of substrate temperature, the critical thickness of amorphous‐crystalline‐transition decreases and the morphology of crystalline phase also evolves from porous to terrace‐like. The high ordering film demonstrates good charge transport ability with a p‐type field‐effect mobility of >1 cm2·V–1·s–1. More details are given in the article by Chi et al. on page 1298—1304.image
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