Insertion of Ga-MoO3 thin film at Cu/p-Si interface for the fabrication of MIS structure Schottky barrier diodes

Abstract

The fabrication of a metal-insulator-semiconductor diode with a pure MoO3 and different weight % of Ga-MoO3 (5, 10, and 15 wt%) thin film insulator layer grown by JNSP techniques. The obtained films were characterized for structural analysis by XRD exposing multiphase of orthorhombic and monoclinic with 10 wt% of Ga-based film with higher crystallite size. FE-SEM images display plate-like structures. UV absorption measurements recorded a band gap of 3.15 eV for 10 wt% Ga doped film. X-ray photoelectron spectroscopy (XPS) investigates is described by the utmost oxidation state. The DC electrical conductivity of the films increased for higher wt% of Ga up to 10 wt%. The I-V characteristic curve of the Cu/Ga-MoO3/p-Si diode parameters n, ФB, PS, R, QE, and D* shows that, current flows predominantly across the interfaces as a result of carrier missioning. In addition, we observed significantly high photocurrent performance from the Cu/Ga-MoO3/p-Si diode under visible light illumination.