Abstract
The behavior of Na+ and K+ migration upon insertion from a polymeric host matrix into different SiOx layers deposited by chemical vapor deposition is investigated via triangular voltage sweep (TVS) measurements. It is indicated that the quality of the oxide, covering a highly doped silicon substrate, has a major influence on the applied bias for transferring ions into and through the insulator. The investigations show the impeding effect of ion insertion as a result of different SiOx qualities. Comparison of the calculated ion dose from TVS and time of flight secondary ion mass spectrometry depth profiling data reveals quantitative capture of the inserted ion species at the SiOx/Si interface. Furthermore, insight into the ion mobility and the reversibility of the migration effect is given by the inversion of the sweep polarity during TVS. Copyright © 2016 John Wiley & Sons, Ltd.
Published Version
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