Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength

Abstract

Using focused subnanosecond laser pulses at 1.064,upmu hbox {m} wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside 300,upmu hbox {m}-thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.