InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy

Abstract

The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10/sup 10/ cm/spl middot/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> 2//W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future.