Abstract
InSb films are prepared by a source-temperature-programmed evaporation method and hot-wire recrystallization method for Hall elements and magnetoresistance (MR) elements, respectively, to reduce imperfections of the crystal structure, and their crystalline and electrical properties are studied. An optimum source-temperature programme is investigated and the films thus prepared are used for Hall elements. An X-ray analysis of the film shows a high degree of stoichiometry. Magnetically sensitive InSb films have been prepared by hot-wire recrystallization. A room-temperature MR value of Δ R/R o = 155 %/T was obtained at 1 T with a length to width ratio ( l/w) = 0.4. Samples have been prepared by sequential deposition of In, InSb, and SiO onto unheated mica substrates.
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