Preparation and crystal properties of thin InSb films for highly sensitive magnetoresistance elements

Abstract

High electron mobility thin InSb films were prepared on mica substrates by conventional vacuum evaporation of InSb to obtain highly sensitive magnetoresistance (MR) elements. The 0.15–0.5 μm thick InSb films were prepared in the present work. An optimum evaporation programming pattern was obtained. The crystal properties of these InSb films of 0.2–0.3 μm were investigated using a transmission electron microscope. It was shown that films thinner than 0.2 μm were semitransparent and consisted of [111] oriented single-crystal films. The 0.15–0.3 μm thick InSb films are therefore most useful for low-cost MR elements because of their high element resistance, small temperature coefficient of electron mobility, and high sensitivity.