In-Plane and Interfacial Thermal Conduction of Two-Dimensional Transition-Metal Dichalcogenides

Abstract

We elucidate the dependence of the in-plane and interfacial thermal conduction of two-dimensional (2D) transition-metal dichalcogenide (TMDC) materials (including ${\mathrm{Mo}\mathrm{S}}_{2}$, ${\mathrm{WS}}_{2}$, and ${\mathrm{W}\mathrm{Se}}_{2}$) on the materials' physical features, such as size, layer number, composition, and substrates. The in-plane thermal conductivity k is measured at suspended 2D TMDC materials and the interfacial thermal conductance g is measured at materials supported on substrates, both through Raman thermometry techniques. The thermal conductivity k increases with the radius R of the suspended area following a logarithmic scaling as k\ensuremath{\sim}log(R). k also shows a substantial decrease from monolayer to bilayer, but only changes slightly with a further increase in the layer number. In contrast, the interfacial thermal conductance g has a negligible dependence on the layer number, but g increases with the strength of the interaction between 2D TMDC materials and the substrate, substantially varying among different substrates. The result is consistent with theoretical predictions and clarifies much inconsistence in the literature. This work provides useful guidance for thermal management in 2D TMDC materials and devices.