Abstract
p ++/n ++ InP tunnel diodes have been fabricated for the first time on InP and Si substrates by solid source Atomic Layer Molecular Beam Epitaxy (ALMBE) at low temperature. The high peak current density exceeding 200 A/cm 2 and the low specific resistance exhibited in these diodes indicate that they are appropriate to use as optically transparent interconnects in InP/Ga 0.47In 0.53As tandem solar cells. This is a very promising result for the use of solid source ALMBE for fabricating these tandem solar cells with a technological process compatible with low temperature technologies, as the conventional silicon technologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.