Abstract
Room temperature laser emission near 1.55 µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340°C by solid source Atomic Layer Molecular Beam Epitaxy, where (lnP)5/(Ga0.47In0.53As)5, lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga0.27In0.73As wells. These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.
Highlights
The results describe the fabrication for the first time of InGaAsP laser diodes with emission in 1.5 μm, at low growth temperature to facilitate its monolithic integration on chips, using all solid-source molecular beam epitaxy including phosphorous (P2)
We have reported [5] that these short period superlattices (SPSL) of binary InP and ternary Ga0.47In0.53 As grown at low temperature by atomic layer molecular beam epitaxy (ALMBE ) [6] have been used to confine GalnAs multiquantum well (MQW) in a separate confinement heterostructure (SCH) of GaInAs/GaInAsP/lnP
We report the first successful fabrication by solid source ALMBE at low substrate temperature of GalnAs SCH-MQW lasers emitting at 1.55 μm where (InP)5/(Ga0.47In0.53As)5, lattice matched SPSL have been used as pseudoquaternary material to confine strained Ga0.3In0.7As wells
Summary
The results describe the fabrication for the first time of InGaAsP laser diodes with emission in 1.5 μm, at low growth temperature to facilitate its monolithic integration on chips, using all solid-source molecular beam epitaxy including phosphorous (P2). Ginty et al [4] have reported laser emission at 1.64 μm in separate confinement SCH multiquantum well lasers grown at 625◦C by metal organic vapour phase epitaxy (MOVPE), where InP/lnGaAs superlattices were used for optical confinement and barrier layers.
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