InP quantum dots-based electroluminescent devices**Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai

Abstract

Indium phosphide (InP) quantum dots (QDs) have shown great potential to replace the widely applied toxic cadmium-containing and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes (QLEDs) have achieved great progress in external quantum efficiency (EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide (CdSe)- and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.