Abstract
Source and drain contacts for an InP MESFET were prepared by an Au/Ni/In0.53Ga0.47As/InP layered structure, without a metal alloying process. A highly conductive In0.53Ga0.47As layer grown on an InP active layer reduced the gate-source resistance. A maximum DC transconductance of 16 mS has been obtained for an InP MESFET with 1.2×190 µm gate dimensions and a pinch-off voltage of -0.7 V.
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