Abstract
Microdisk and photonic crystal (PC) cavity lasers were fabricated on InP based heterostructures integrated on silicon wafers. Single InGaAs quantum well, multiple InGaAs quantum wells and InAs quantum wires are used as active layers. Laser emission is achieved on quantum well based microdisk and PC microcavities. A comparison is made between different combinations of microcavity shapes and active material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
