Abstract
In this work, we study the InP-InGaAs single photon avalanche diodes with multiple InGaAs quantum wells in the multiplication region for quantum information and communication. The compositions of InGaAs quantum wells are adjusted to give transition wavelength of 1.55. Simulation results show that three orders of magnitude improvement of dark count probability and an order of magnitude improvement of single photon quantum efficiency are expected with the adaption of multiple quantum-wells in the multiplication region. The improvement dark count probability is due to the difference of ionization coefficients for electrons and holes caused by the large difference between the conduction and valence band edge of multiple quantum-well layers inserted in the multiplication layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
