Abstract
n‐Type samples have been exposed to an RF‐excited hydrogen plasma for different power levels with variation of the substrate dc bias‐voltage. At negative and low positive bias‐voltages, depending on the RF power, surface damage is caused by bombardment of high‐energy positive ions. Increasing the bias‐voltage reduces the damage and the application of one particular bias‐value can prevent a change in carrier concentration after plasma exposure. For higher positive bias‐voltages the resulting carrier concentration towards the surface decreases again, this effect being probably due to bombardment of negative ions or a surplus of phosphorus ions at the sample surface. The investigations show that the ion energy is a critical parameter in plasma cleaning procedures of semiconductors and that a hydrogen plasma can be used to clean substrates for epitaxial growth, if an appropriate bias‐voltage is applied to the substrate, in order to prevent surface damage.
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