Abstract
Excellent linear efficiency has been demonstrated with InP double heterojunction bipolar transistors (DHBTs) being developed for military and commercial applications under an Air Force Dual-Use Science and Technology (AF DUS and T) program. The 1.95 GHz to 28 GHz operating frequencies address applications from commercial wireless communication up through Local Multipoint Distribution Services systems. Excellent carrier to third-order intermodulation (C/IM3) ratios have also been measured simultaneously with high power-added efficiency (PAE) on InP DHBT circuits. This linear-efficient performance is due, in part, to the InP DHBT's improved breakdown voltage, improved cut-off frequency and the reduced offset voltage resulting from the double heterojunction and InP collector.
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