Abstract
A new heterojunction bipolar transistor (HBT) structure with buried SiO 2 wires is proposed. SiO 2 wires were buried in the InP layer by metalorganic vapor-phase epitaxy (MOVPE). The insertion of SiO 2 wires under the base electrodes reduces collector capacitance because of a small dielectric constant. Two SiO 2 wires of 200 nm width and 60 nm height on the InP substrate were buried in an InP DHBT structure with a flat heterointerface when the buried growth temperature was 580 °C and the direction of the wire was 〈0 1 0〉.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
