Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p +GaAs base layers

Abstract

In this work we have examined the effect of RF annealing (450–750°C, 5–30 min) upon both InGaP/GaAs-based hetero-junction bipolar transistor (HBT) structures, fabricated by metalorganic vapour phase epitaxy (MOVPE), as well as thick carbon (C)-doped p +GaAs HBT base layers with varying layer thickness, dopant level and type (intrinsic and extrinsic C precursors) and co-doping (In) strain compensation. Anneal-induced changes in the p +GaAs layer lattice strain, Hall carrier concentration and mobility were compared with non-radiative losses, determined from photoluminescence (PL) intensity data. Majority and minority carrier property differences were also compared with IR reflection, Raman backscattering and photoreflectance (PR) data and correlated with changes in MOVPE hydrogen background concentration as determined by secondary-ion-mass-spectroscopy (SIMS). Thick base layer (1.3 μm) HBT structures were also examined for different anneal temperatures and time, showing significant changes in the PR emitter(InGaP)/base (p +GaAs) and base/collector (n-GaAs) interface regions for the 650°C anneal condition, as correlated with both PL and SIMS hydrogen concentration data.