Abstract
We have developed InP-based high electron mobility transistors (HEMTs) suitable for fabricating ultra-high-speed MMICs. Scaling of both vertical and horizontal directions was investigated for enhancing transconductance, which enables us to realize high-speed characteristics without ultra-short-length gate electrodes. Parasitic capacitance that originated from interlayer dielectric films for interconnection was reduced by using a cavity structure, which was formed by removing the interlayer dielectric film around the gate electrodes. We successfully fabricated a 45-nm gate InP HEMT with a cut-off frequency of 517 GHz by employing the above technologies even after the interconnection. These results indicate that the device technology reported in this paper is suitable for fabricating MMICs operating at millimeter-wave frequency.
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