Abstract
We improved the high frequency and noise characteristics of InP-based high electron mobility transistors (HEMTs) by reducing parasitic capacitance in the gate region and achieved a cutoff frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) of 517 GHz and minimum noise figure (NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> ) of 0.71 dB at 94 GHz even after the interconnection process. Scaling of the gate-recess length is effective for enhancing transconductance (g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ). Furthermore, the cavity structure successfully reduced the parasitic capacitance originating from interlayer dielectric films.
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