Abstract
InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2were compared with the layers grown using As4from a Riber standard cracker cell. When As4is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).
Highlights
In the past few decades, InP and InGaAs materials have played an increasingly important role in optoelectronic and microelectronic devices
After many years of development, growth of high quality InP and InGaAs epitaxy layers has been achieved by many techniques, such as low pressure metalorganic vapor phase epitaxy, gas source molecular beam epitaxy, solid source molecular beam epitaxy, and metalorganic chemical vapor deposition[4,5,6,7,8,9,10,11,12]
In the first group of experiments, four samples were InP epitaxial layers grown on semiinsulating InP substrates, which can reduce the effect of substrates on the electrical properties of epitaxial materials
Summary
In the past few decades, InP and InGaAs materials have played an increasingly important role in optoelectronic and microelectronic devices. When the composition of gallium in InGaAs changes from 1 to 0, the energy gap decreases from 1.43 eV to 0.36 eV at room temperature. The molecular or atomic beams of the constituent elements crystallize on a substrate maintained at an elevated temperature under ultra-high vacuum environment. The beam is As2 mode when the cracking zone temperature of arsenic source cell is as high as 950°C. As2 can improve the optical properties of the materials, the high temperature of As cracking zone will bring impurities which increase the carrier concentration of the materials[18,19,20,21]. It is necessary to study the growth of high quality InP and InGaAs materials by molecular beam epitaxy, and the effects of As2 and As4 on the epitaxy of InGaAs materials
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