Abstract
This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.
Highlights
Since InN was found to have a bandgap of 0.7 eV in 2002, the nitrides community has claimed that the III-nitrides system can span from the near infrared all the way to the ultraviolet (Davydov et al, 2002; Wu, 2009)
For InN quantum dots (QDs) to be incorporated as the active region in standard LED and laser diode structures, the dots must be buried underneath additional material, either p-type or n-type
The existing work on InN QDs by metalorganic chemical vapor deposition (MOCVD) has mapped out the growth space such that the size, shape, and density of QDs can be tailored for specific applications by varying parameters such as growth time, V/III ratio, temperature, and precursor flows
Summary
This review will cover recent work on InN quantum dots (QDs), focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. We will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed
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