InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

Kuang-Wei Liu,Ya-Ling Wu,Tao-Hung Hsueh,Sheng-Joue Young,Shih-Ming Wang,Hung Hung,Yu-Chun Mai,Shoou-Jinn Chang,Yue-Zhang Chen,Kuan-Jen Chen

doi:10.1186/1556-276x-6-442

Kuang-Wei Liu, Ya-Ling Wu + Show 8 more

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The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

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Indium nitride (InN) has attracted much attention due to its narrow band-gap energy, existence of a surface accumulation layer, low electron effective mass, high carrier mobility, and high saturation velocity
Since CrN nanoisland has been formed on the Si substrate, AlN buffer layer thickness was only 80 nm, as the AlN nucleated on the Si substrate, the Al droplet will be limited to between CrN nanoisland, so the lateral growth of AlN will be inhibited by CrN nanoisland; while the AlN nucleated on the CrN nanoisland, Al droplet of lateral diffusion was more difficult, it suppressed the lateral growth of AlN, from these reasons, the result as Figure 1a the AlN formed the dotlike structures
This should be attributed to the larger lateral growth rate for the indium nitride (InN) nanorods grown on film-like 2D AlN under Inrich condition, under the same growth condition, due to InN nucleated on dot-like AlN nucleation layer was surrounded by low-index planes, {10-10} and {0001}, continuously grew into 1D structure, the InN nanorods lateral growth was suppressed, this reason indicated that InN nanorods can only be grown vertically

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Introduction

Indium nitride (InN) has attracted much attention due to its narrow band-gap energy (i.e., around 0.7 eV), existence of a surface accumulation layer, low electron effective mass, high carrier mobility, and high saturation velocity. The catalyst often introduces unintentional doping which might cause changes in electrical and optical properties of the Recently, Ha et al and Lin et al proposed a chemical lift-off method to fabricated GaN-based vertical lightemitting diodes (LEDs) [16,17,18,19,20] They first formed a CrN layer on sapphire substrate by Cr deposition and nitridation [21,22]. After the deposition of GaN-based LED structure, they removed the sapphire substrate by etching the CrN layer through the edge of interfaces between GaN and sapphire In their study, they proposed that CrN nanoislands were formed by Cr deposition and nitridation on AlN/sapphire template [23]. The morphological evolution and crystal quality for the InN nanorods prepared with and without the CrN nanoislands will be discussed

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