Abstract
Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors’ InN nanoflower pattern.
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