Abstract
The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He+ ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He+ ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (0001)-polarity domains indicated that the InN film is approximately 75 % In-polarity and 25 % N-polarity. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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