Abstract
In this paper, we report a novel approach for the fabrication of chalcopyrite CuIn x Ga 1− x Se 2 thin film solar cells by inkjet printing. The short circuit current ( J sc), open circuit voltage ( V oc), fill factor (FF), and total area power conversion efficiency ( η) of the device are 29.78 mA/cm 2, 386 mV, 0.44%, and 5.04%, respectively. Inkjet printing at atmospheric environment offers an opportunity for the direct patterning of absorber materials at large scale. This provides a potential cost advantage over conventional fabrication process that involves sequential deposition, patterning, and etching of selected materials. In addition, inkjet printing increases the raw material utilization ratio compared to more wasteful vacuum-based deposition techniques.
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