Abstract
Single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) were fabricated using ink-jet printing. We printed both thick source–drain electrodes and thin active semiconducting films using N,N-dimethylformamide (DMF)-based SWCNT dispersion. Despite the presence of metallic SWCNTs, the device exhibited field-effect behavior, with an effective mobility of 2.99 cm2 V-1 s-1 and an on/off current ratio of up to 75. The method used in this study is promising for the fabrication of large-scale high-performance SWCNT-TFTs.
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