Abstract
Injection locked quantum-dash laser diode-based comb source is employed in wavelength-division multiplexed (WDM) optical transmission covering ∼1610 nm L-band optical telecommunication window. An aggregate data rate of 192 Gbits/s (3 × 32 GBaud-QPSK reaching 7% FEC overhead) is demonstrated over three 50 GHz separated channels in coherent transmission over a 10 km-long single mode fiber. A thorough investigation of the radio-frequency (RF) characteristics of all channels is carried out in terms of the linewidth, phase, and frequency noises, showing minimum values of 44 kHz, −80 dBc/Hz, and 5.2 × 1011 Hz2/Hz, respectively. Also, an integrated average relative intensity noise of ∼−132 dB/Hz is reported for the central channel. To the best of our knowledge, this constitutes the first report and demonstration of a dense WDM (DWDM) in an extended L-band regime using a comb source.
Highlights
The demands for ultrahigh bandwidth optical communication networks have been ever-intensifying owing to the sharp increase in both the number of end-users and their demand for high-speed mobile and internet connectivity
wavelength-division multiplexed (WDM)-PONs have been acknowledged as the ultimate solution for 10G, 100G, and 400G generation PONs (NG-PONs) that can be implemented in the current infrastructure without the need for a major overhaul, yielding in low capital expenditure (CAPEX) [3], all while offering customers security, protocol- and bitratetransparency, and large scalability and upgradability, besides retaining a very small number of optical fibers, resulting in a significantly lower operating expenditure (OPEX) of the optical networks [4]
The highly dispersive size of self-assembled Qdashes are intrinsically associated with multimode Qdash laser diodes (QDLD) emission exhibiting relatively inferior RF characteristics such as broad fL and high noise floors
Summary
The demands for ultrahigh bandwidth optical communication networks have been ever-intensifying owing to the sharp increase in both the number of end-users and their demand for high-speed mobile and internet connectivity. L-band QDLD diode-based transmitters would enable extending the operational bandwidth from the well-exhausted C-band to the neighboring L-band, as a natural evolution [3], and standout as prime candidates for realizing this promising approach These quantum confined nanostructure-based lasers possess niche features such as compact size, low power consumption, integrability in hybrid optical-silicon systems [8], [9], and more importantly their inherent broadband gain profiles due to inhomogeneous dash sizes owing to the self-assembly growth process. This latter feature seems a disadvantage for lasers, has been exploited to realize 1550 nm multiwavelength QDLD or comb sources [7], which has qualified them as promising contenders for source-unified NG-PON paradigms [10]
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