Abstract
The charge state change of MOS structures with multilayer dielectric films SiO2-PSG under high-field injection modification at different temperatures is studied in this article. The effect of temperature on the thermal stability of the negative charge component used to adjust the threshold voltage of MOS transistors is investigated. It is found that the performance of the high-field injection modification of MOS structures in the mode of constant current at elevated temperatures increases not only the density of the trapped negative charge but also its thermally stable component.
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