Abstract
A model of recombination of nonequilibrium charge carriers in multilayer structures (nanocrystalline Si-insulator) was suggested. It was found that the restriction of carrier transport through the localized states of the insulator leads to a nonlinear increase in the intensity of electroluminescence (EL) with an increase in the current flowing across the structure. The subsequent leveling off of this dependence is associated with the increasing role of Auger recombination with increasing current. A decrease in the contribution of the nonradiative Auger process can be accomplished by increasing the concentration of nanodimensional clusters in Si and the number of periods of the structure. It was demonstrated that one of the main ways to increase the EL intensity is increasing the hole density at the hole-injecting contact.
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