Noncontact determination of the rate of surface recombination of nonequilibrium charge carriers at the p–p+ (n–n+) boundaries of n+–p(n)–p+ silicon structures by means of compensation

Abstract

Calculations show that the rate of the surface recombination of nonequilibrium charge carriers at the back of a p(n) region with known lifetime values can be determined for n+–p(n)–p+ structures of silicon by non-contact measurement. This allows us to determine the photosensitivity contrast along a surface structure upon its local illumination.