Abstract
Theoretical analyses of the lifetimes of injected electrons and holes, and the double-injection currents in long p-i-n diodes with a single impurity level, are treated by evaluating the space-charge density formed by the injection of the minority carrier lifetimes and the current-voltage characteristics are obtained in a low- and a high-injection regime, and approximately in an intermediate-injection regime, when the physical parameters of the i region and the dependence of the equilibrium majority-carrier density upon temperature have been measured beforehand.
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