Abstract
This study delves into the performance and stability of quantum-dot light-emitting diodes (QLEDs), with a specific focus on the initial variations in device properties and the effectiveness of various stabilization strategies. We assess the impact of initial bias conditions, reverse bias treatment, thermal annealing of the zinc oxide electron transport layer (ZnO electron transporting layer), and the effects of shelf storage on device reliability and efficiency. Our findings reveal that QLEDs are highly sensitive to initial bias conditions, yet this sensitivity can be significantly reduced through strategic interventions such as thermal annealing and reverse bias applications. These treatments are shown to markedly enhance the operational reliability of the devices. By providing deep insights into the mechanisms behind the initial variations in QLED properties, our research outlines practical measures for improving their performance and reliability, with profound implications for the advancement of high-performance display technologies.
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