Abstract
In this work we explore the first stages of quantum wires (QWRs) formation studying the evolution of the growth front for InAs coverage below the critical thickness, θ c , determined by reflection high-energy electron diffraction. Our results show that at a certain InAs coverage θ ( InAs ) < θ c , the elastic relaxation process starts by spontaneous formation of isolated QWRs that evolves towards QWRs covering the whole surface with increasing InAs thickness. These results allow for a better understanding of the self-assembling process of QWRs in the InAs/InP system and for the first time enable the study of the novel properties of single self-assembled QWR.
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