Abstract
An STM study of the PrSi(111)-(7 × 7) interface reveals a much more heterogeneous growth morphology than is suggested by diffraction techniques and spectroscopies which average over the surface. Deposition of 1 ML followed by annealing at 650°C gives the most orderly growth, but this falls short of 2D epitaxy. At high temperatures (> 1000°C), the small amount of rare earth remaining on the surface stabilises some novel Si(111) surface reconstructions.
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