Abstract
Growth processes in the initial stage of Ge films on (311)Si substrate surfaces by gas source molecular beam epitaxy using GeH 4 have been studied by in-situ observations of reflection high-energy electron diffraction and by replica electron microscopy. It has been found that clean (311)Si surfaces have a (3 × 2) superstructure at substrate temperatures below 500°C and a (3 × 1) superstructure at 600°C. The growth mode of Ge films is of Stranski-Krastanov type and at the final step of two-dimensional (2D) growth a (1 × 2) structure is formed on both the (311)Si−(3 × 2) and −(3 × 1) surfaces. However, a c(4 × 2) structure is observed at the initial stage of growth only below 500°C. At the island growth step, Ge faceted islands have an ordinary shape below 400°C and a long rectangular shape parallel to [ 2 33] above 500°C. The growth behavior of the 2D domains is considered to be connected with the atomic arrangement and the bonding configuration of (311)Si surfaces.
Published Version
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