Abstract
Abstract High resolution electron energy loss spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS) have been used to characterize the initial stages of chemisorption and/or oxidation on Si(100)2 × 1 between 300 and 1000 K at coverages below 1.5 monolayers. The EELS spectra are discussed comparatively in terms of an augmented central-force model and of localized vibrations of Si/O/Si complexes.
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